H4E1N1
4.4–5.5 GHz, 20 W Psat, 3 W Pavg, 32 dB Gain, GaN MMIC Power Amplifier for 5G NR
Engineered for demanding RF systems.
Built for integration.
Description
The H4E1N1 is a multi-stage GaN MMIC power amplifier designed for 5G NR macro base stations and small cells operating across the n79, n46, and Wi-Fi 6E bands (4.4–5.5 GHz). It integrates the Doherty combining network on-chip, eliminating external splitters, combiners, and matching networks. Input and output are matched to 50Ω — drops directly into a standard RF layout without additional tuning.
Characterisation data covers real 5G NR OFDM waveforms at up to 100 MHz instantaneous bandwidth with carrier aggregation across 2×100 MHz — not extrapolated from CW measurements. The device delivers 3 W average power with –32 dBc ACPR (uncorrected) and ~7% EVM at 8 dB output back-off, meeting 3GPP NR base station requirements without DPD for many use cases.
Housed in a 4×5 mm QFN package with 50Ω matched I/O and no external components required for RF matching.
Features
- 32 dB small signal gain, ±1.5 dB gain flatness across 4.4–5.5 GHz
- 43 dBm Psat (20 W), 3 W average power at 5G NR operating conditions
- Peak PAE >40% at Psat; >15% PAE at Pavg
- –32 dBc ACPR uncorrected at 3 W Pavg (5G NR, 100 MHz BW, 7.5 dB PAPR)
- ~7% EVM at 8 dB output back-off
- 100 MHz instantaneous bandwidth; 2×100 MHz carrier aggregation
- Integrated Doherty combining network — no external components required
- 50Ω matched at input and output RF terminals
- Supply voltage: 30 V (typ), 35 V (max)
- QFN 4×5 mm, 24-lead package
- Shipping Now — Global
Applications
- 5G NR Macro Base Stations (n79 / n46 / Wi-Fi 6E)
- 5G NR Small Cells
- Fixed Wireless Access (FWA)
- C-Band Infrastructure
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
