H4E1N1
4.4–5.5 GHz, 20 W Psat, 3 W Pavg, 32 dB Gain, GaN MMIC Power Amplifier for 5G NR
Description
The H4E1N1 is a multi-stage GaN MMIC power amplifier designed for 5G NR macro base stations and small cells operating across the n79, n46, and Wi-Fi 6E bands (4.4–5.5 GHz). It integrates the Doherty combining network on-chip, eliminating external splitters, combiners, and matching networks. Input and output are matched to 50Ω — drops directly into a standard RF layout without additional tuning.
Characterisation data covers real 5G NR OFDM waveforms at up to 100 MHz instantaneous bandwidth with carrier aggregation across 2×100 MHz — not extrapolated from CW measurements. The device delivers 3 W average power with –32 dBc ACPR (uncorrected) and ~7% EVM at 8 dB output back-off, meeting 3GPP NR base station requirements without DPD for many use cases.
Housed in a 4×5 mm QFN package with 50Ω matched I/O and no external components required for RF matching.
Features
- 32 dB small signal gain, ±1.5 dB gain flatness across 4.4–5.5 GHz
- 43 dBm Psat (20 W), 3 W average power at 5G NR operating conditions
- Peak PAE >40% at Psat; >15% PAE at Pavg
- –32 dBc ACPR uncorrected at 3 W Pavg (5G NR, 100 MHz BW, 7.5 dB PAPR)
- ~7% EVM at 8 dB output back-off
- 100 MHz instantaneous bandwidth; 2×100 MHz carrier aggregation
- Integrated Doherty combining network — no external components required
- 50Ω matched at input and output RF terminals
- Supply voltage: 30 V (typ), 35 V (max)
- QFN 4×5 mm, 24-lead package
- Shipping Now — Global
Applications
- 5G NR Macro Base Stations (n79 / n46 / Wi-Fi 6E)
- 5G NR Small Cells
- Fixed Wireless Access (FWA)
- C-Band Infrastructure
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