H4P1A1
4.4-5.0 GHz, 24 dBm Psat, 17 dB Gain, GaN MMIC General-purpose Amplifier
Description
The H4P1A1 is a general-purpose radio frequency (RF) amplifier for use in 5G FR1 applications. It provides a saturated output power of 24 dBm across the 4.4–5.0 GHz frequency band. The amplifier offers exceptional linearity and comes with 50 Ω input and output impedances without the need for external matching elements. The GaN MMIC is housed in a 4 mm x 5 mm QFN package and enables a small-footprint, low-cost PCB design, as only four pins are needed for all external connections including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 5V VDD
- 17 dB small signal gain with ±1 dB gain flatness
- 24 dBm of output power
- PAE > 30% across the band
- Excellent EVM performance
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output RF terminals
- Single VGG and VDD supply pins for all transistor stages
- Robustness to ESD
Applications
- 5G Macro Base Stations and Small Cells
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