H4P2G1
4.4-5.0 GHz, 5 W, 33 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package
Description
The H4P2G1 is a high-performance, multi-stage radio frequency power amplifier (PA) for use as a pre-driver or a driver stage in a 5G base station PA lineup, or as a final-stage PA in 5G Fixed Wireless Access (FWA) devices. The amplifier provides > 5 Watts of saturated RF power across the 4.4-5.0 GHz frequency band, along with high gain and exceptional gain flatness, superior efficiency and 50 Ω input and output impedances without the need for external matching elements. This GaN MMIC is housed in a 4 mm x 5 mm QFN package. It enables a small-footprint, low-cost PCB design, as only four pins are needed for all external connections including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 33 dB small signal gain, ±0.5 dB gain flatness
- 37 dBm of output power
- PAE > 30% across the band
- Excellent EVM performance
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output RF terminals
- Single VGG and VDD supply pins for all stages
- Robustness to ESD
Applications
- 5G Macro Base Stations and Small Cells
- 5G FWA Devices
Join the Millibeam Revolution
Join our newsletter to stay up to date on features and releases.
Acknowledgment of Country - MIILIBEAM acknowledges the Traditional Custodians of the lands throughout Australia where we live and work today. We celebrate the diversity of Aboriginal peoples and their ongoing cultures and connections to land, sea and community. We pay our respects to the Elders both past and present and extend that respect to all Aboriginal and Torres Strait Islander peoples today.
