Power Amplifiers
H4C1M1
3.3–3.8 GHz, 20 W Psat, 31 dB Gain, GaN Integrated Doherty Power Amplifier for 5G NR n78
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
3.3 – 3.8 GHz
SPEC 02
20 W (42.5 dBm)
SPEC 03
31 dB ±1 dB
PRODUCT OVERVIEW
Built for integration.
Description
The H4C1M1 is a GaN integrated Doherty power amplifier for 5G NR n78, delivering 42.5 dBm (20 W) Psat across 3.3–3.8 GHz with 31 dB gain. The Doherty network is on-chip, so no external splitter or combiner is required. Approximately 34% average PAE at 8 dB output back-off with ACPR of −33 dBc.
Features
- 31 dB gain with ±1 dB flatness
- 42.5 dBm saturated output power (20 W)
- ~34% average PAE at 8 dB output back-off
- ACPR −33 dBc, EVM ~5% at 8 dB back-off
- Supports 100 MHz signal bandwidth and 2× carrier aggregation
- Doherty splitter and combiner integrated on-chip
- 50 Ω matched at input and output
- QFN 4×5 mm package
Applications
- 5G NR Macro Base Stations
- 5G Small Cells
- Fixed Wireless Access
TECHNICAL VIEW
System detail.
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Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
