H4C1Q7
3.3–3.8 GHz, 60 W Psat, 20 dB Gain, GaN Doherty Power Amplifier for 5G NR n78

Engineered for demanding RF systems.
Built for integration.
Description
The H4C1Q7 is a GaN Doherty power amplifier for 5G NR n78 macro base stations, delivering 48 dBm (60 W) Psat across 3.3–3.8 GHz with 20 dB gain. Approximately 40% average PAE at 8 dB output back-off, supporting 100 MHz signal bandwidth and 2× 100 MHz carrier aggregation. The n78 counterpart to the H4O1Q7.
Features
- 20 dB gain with ±1 dB flatness
- 48 dBm saturated output power (60 W)
- ~40% average PAE at 8 dB output back-off
- Supports 100 MHz signal bandwidth and 2× 100 MHz carrier aggregation
- 50 Ω matched at input and output, no external matching required
- QFN 11.2×10.8 mm package
Applications
- 5G NR Macro Base Stations
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
