Power Amplifiers
H4E1M1
4.5–5.0 GHz, 20 W Psat, 30 dB Gain, GaN Integrated Doherty Power Amplifier for 5G NR n79
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KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
4.5 – 5.0 GHz
SPEC 02
20 W (43 dBm)
SPEC 03
30 dB ±1 dB
PRODUCT OVERVIEW
Built for integration.
Description
The H4E1M1 is a GaN integrated Doherty power amplifier for 5G NR n79, delivering 43 dBm (20 W) Psat across 4.5–5.0 GHz with over 30 dB gain. The Doherty network is on-chip. Approximately 32% average PAE at 8 dB output back-off with ACPR of −32 dBc.
Features
- Over 30 dB gain with ±1 dB flatness
- 43 dBm saturated output power (20 W)
- ~32% average PAE at 8 dB output back-off
- ACPR −32 dBc, EVM 5–6% at 8 dB back-off
- Supports 100 MHz signal bandwidth and carrier aggregation
- Doherty splitter and combiner integrated on-chip
- 50 Ω matched at input and output
- QFN 4×5 mm package
Applications
- 5G NR Macro Base Stations
- 5G Small Cells
- Fixed Wireless Access
TECHNICAL VIEW
System detail.
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Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
