Products
H4O1T7
Link Three

H4O1T7

2.5–2.7 GHz, 100 W, 20 dB Gain, GaN Doherty PA for 5G NR n41

Type
Power Amplifiers
Frequency (GHz)
2.5 – 2.7 GHz
Insertion loss (dB)
100 W (50 dBm)
Switching time (ns)
20 dB (typ.)
Type
Power Amplifiers
Frequency
2.5 – 2.7 GHz
# of elements
100 W (50 dBm)
Output Power (dBm)
20 dB (typ.)
Type
Power Amplifiers
Frequency
2.5 – 2.7 GHz
Realized Gain (dBi)
100 W (50 dBm)
Polarization profile
20 dB (typ.)
Type
Power Amplifiers
Input Frequency (GHz)
2.5 – 2.7 GHz
LO Frequency (GHz)
100 W (50 dBm)
Output Frequency (GHz)
20 dB (typ.)
Type
Power Amplifiers
Frequency (GHz)
2.5 – 2.7 GHz
Power Level (W)
100 W (50 dBm)
Gain (dB)
20 dB (typ.)
Type
Power Amplifiers
Frequency (GHz)
2.5 – 2.7 GHz
Power Level (W)
100 W (50 dBm)
Type
Power Amplifiers
Frequency
2.5 – 2.7 GHz
Gain (dB)
100 W (50 dBm)
Secondary features
20 dB (typ.)
Type
Power Amplifiers
Frequency (GHz)
2.5 – 2.7 GHz
# of elements
100 W (50 dBm)
Output Power (dBm)
20 dB (typ.)
*Specifications may change without notice
Description

The H4O1T7 is a GaN Doherty power amplifier module delivering 100 W Psat across the 2.5–2.7 GHz 5G NR n41 band. It achieves ~38% average PAE at 8 dB back-off with ACPR of -30 dBc and EVM of ~5%, supporting 100 MHz signal bandwidth and 2× 100 MHz carrier aggregation. No external matching required.

Features
  • 2.5 – 2.7 GHz (5G NR n41)
  • 20 dB Gain, ±1 dB flatness
  • 100 W saturated output power (50 dBm)
  • ~38% average PAE @ 8 dB O.B.O
  • ACPR ~ -30 dBc, EVM ~ 5% @ 8 dB O.B.O
  • Supports 100 MHz signal bandwidth
  • Supports 2× 100 MHz carrier aggregation
  • 50 Ω matched I/O — no external matching required
Applications
  • 5G NR Macro Base Stations

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