Power Amplifiers
H4V1C1
0.4–2 GHz, 0.5 W, 32 dB Gain, GaN MMIC PA in QFN Package
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
0.4 – 2 GHz
SPEC 02
0.5 W (27 dBm)
SPEC 03
32 dB (typ.)
PRODUCT OVERVIEW
Built for integration.
Description
The H4V1C1 is a GaN MMIC power amplifier delivering 0.5 W of RF output power across 0.4–2 GHz with 32 dB small signal gain. It integrates 50 Ω matched I/O, single-supply bias, and ESD protection in a compact 4 × 5 mm QFN package. No external matching is required.
Features
- 32 dB small-signal gain with ±2 dB flatness
- 27 dBm (0.5 W) saturated output power
- 50 Ω matched at input and output — no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- ISM Band Applications
- L-Band Satellite Uplinks
- Electronic Warfare
- Public Safety Radio
TECHNICAL VIEW
System detail.
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Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
