H4V1C1

0.4–2 GHz, 0.5 W, 32 dB Gain, GaN MMIC PA in QFN Package

Type
Power Amplifiers
Frequency (GHz)
0.4 – 2 GHz
Insertion loss (dB)
0.5 W (29 dBm)
Switching time (ns)
32 dB (typ.)
Type
Power Amplifiers
Frequency
0.4 – 2 GHz
# of elements
0.5 W (29 dBm)
Output Power (dBm)
32 dB (typ.)
Type
Power Amplifiers
Frequency
0.4 – 2 GHz
Realized Gain (dBi)
0.5 W (29 dBm)
Polarization profile
32 dB (typ.)
Type
Power Amplifiers
Input Frequency (GHz)
0.4 – 2 GHz
LO Frequency (GHz)
0.5 W (29 dBm)
Output Frequency (GHz)
32 dB (typ.)
Type
Power Amplifiers
Frequency (GHz)
0.4 – 2 GHz
Power Level (W)
0.5 W (29 dBm)
Gain (dB)
32 dB (typ.)
Type
Power Amplifiers
Frequency (GHz)
0.4 – 2 GHz
Power Level (W)
0.5 W (29 dBm)
Type
Power Amplifiers
Frequency
0.4 – 2 GHz
Gain (dB)
0.5 W (29 dBm)
Secondary features
32 dB (typ.)
Type
Power Amplifiers
Frequency (GHz)
0.4 – 2 GHz
# of elements
0.5 W (29 dBm)
Output Power (dBm)
32 dB (typ.)
*Specifications may change without notice
Description

The H4V1C1 is a GaN MMIC power amplifier delivering 0.5 W of RF output power across 0.4–2 GHz with 32 dB small signal gain. It integrates 50 Ω matched I/O, single-supply bias, and ESD protection in a compact 4 × 5 mm QFN package. No external matching is required.

Features
  • 32 dB Small Signal Gain with ±2 dB flatness
  • 29 dBm output power
  • Unconditional RF stability from DC to 40 GHz
  • 50 Ω matched at input and output — no external matching required
  • Single VGG and VDD supply pins for all transistor stages
  • ESD protection
Applications
  • ISM Band Applications
  • L-Band Satellite Uplinks
  • Electronic Warfare
  • Public Safety Radio

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