Power Amplifiers
H4V1I1
0.4–2 GHz, 7 W, 39 dB Gain, GaN MMIC PA in QFN Package
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
0.4 – 2 GHz
SPEC 02
7 W (38.5 dBm)
SPEC 03
39 dB (typ.)
PRODUCT OVERVIEW
Built for integration.
Description
The H4V1I1 is a multi-stage GaN MMIC power amplifier delivering 7 W (38.5 dBm) of saturated RF output power across 0.4–2 GHz with 39 dB small-signal gain and 53% peak PAE. It integrates 50 Ω matched I/O, single-supply bias, and ESD protection in a compact 4 × 5 mm QFN package. No external matching is required.
Features
- 39 dB small-signal gain with ±1.5 dB flatness
- 38.5 dBm (7 W) saturated output power
- 53% peak PAE
- Unconditional RF stability from DC to 20 GHz
- 50 Ω matched at input and output — no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Electronic Warfare
- Industrial and Scientific Systems
- Deep Space Applications
TECHNICAL VIEW
System detail.
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Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
