H4W1A1
2.3–7 GHz, 0.25 W, 25 dB Gain, GaN MMIC Power Amplifier for Wi-Fi Infrastructure, UAS, and S-Band Radar
Engineered for demanding RF systems.
Built for integration.
Description
The H4W1A1 is a high-performance, linear GaN MMIC power amplifier designed for Wi-Fi infrastructure, unmanned aerial systems (UAS), and S-band radar. The amplifier delivers 0.25 W of RF output power across a bandwidth of 2.3 to 7 GHz with exceptional linearity and 50 ohm matched input and output impedances — no external matching elements required.
Housed in a compact 4 mm x 5 mm QFN package, the H4W1A1 requires only four external pins for all connections including RF input, RF output, and multi-stage gate and drain supply voltages. This minimises PCB footprint and simplifies board design for cost-sensitive applications.
Unconditional RF stability is guaranteed from DC to 40 GHz, making the device suitable for demanding system environments where stability margins are critical.
Features
- 25 dB small signal gain with ±1.5 dB flatness across 2.3–7 GHz
- 24 dBm output power
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output pins — no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
- QFN 4×5 mm, 24-lead package
- Only 4 external pins required for all connections
Applications
- Wi-Fi Infrastructure
- Unmanned Aerial Systems (UAS)
- S-Band Radar
- Electronic Warfare
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
