H4W1A1
2.3–7 GHz, 0.25 W, 25 dB Gain, GaN MMIC Power Amplifier for Wi-Fi Infrastructure, UAS, and S-Band Radar
Engineered for demanding RF systems.
Built for integration.
Description
The H4W1A1 is a high-performance, linear GaN MMIC power amplifier designed for Wi-Fi infrastructure, unmanned aerial systems (UAS), and S-band radar. The amplifier delivers 0.25 W of RF output power across a bandwidth of 2.3 to 7 GHz with exceptional linearity and 50 ohm matched input and output impedances — no external matching elements required.
Housed in a compact 4 mm x 5 mm QFN package, the H4W1A1 requires only four external pins for all connections including RF input, RF output, and multi-stage gate and drain supply voltages. This minimises PCB footprint and simplifies board design for cost-sensitive applications.
Unconditional RF stability is guaranteed from DC to 40 GHz, making the device suitable for demanding system environments where stability margins are critical.
Features
- 25 dB small signal gain with ±1.5 dB flatness across 2.3–7 GHz
- 24 dBm output power
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output pins — no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
- QFN 4×5 mm, 24-lead package
- Only 4 external pins required for all connections
Applications
- Wi-Fi Infrastructure
- Unmanned Aerial Systems (UAS)
- S-Band Radar
- Electronic Warfare
System detail.
Need the full technical brief?
Tell us about your requirements and our engineering team will follow up.
