Power Amplifiers
H4W1G1
2–6 GHz, 5 W, 26 dB Gain, GaN MMIC PA in QFN Package
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
2 – 6 GHz
SPEC 02
5 W (37 dBm)
SPEC 03
26 dB (typ.)
PRODUCT OVERVIEW
Built for integration.
Description
The H4W1G1 is a multi-stage GaN MMIC power amplifier delivering 5 W of RF output power across 2–6 GHz with 26 dB small signal gain and 35% peak PAE. It integrates 50 Ω matched I/O, single-supply bias, and ESD protection in a compact 4 × 5 mm QFN package. No external matching is required.
Features
- 26 dB Small Signal Gain with ±1 dB flatness
- 37 dBm output power
- 35% peak PAE
- Unconditional RF stability from DC to 20 GHz
- 50 Ω matched at input and output, no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Electronic Warfare
- Industrial and Scientific Systems
- Deep Space Applications
TECHNICAL VIEW
System detail.
START A CONVERSATION
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
