H4W1G1
2–6 GHz, 7 W, 26 dB Gain, GaN MMIC PA in QFN Package
Description
The H4W1G1 is a multi-stage GaN MMIC power amplifier delivering 7.2 W of RF output power across 2–6 GHz with 26 dB small signal gain and 36% peak PAE. It integrates 50 Ω matched I/O, single-supply bias, and ESD protection in a compact 4 × 5 mm QFN package. No external matching is required.
Features
- 26 dB Small Signal Gain with ±1 dB flatness
- 38.6 dBm output power
- 36% peak PAE
- Unconditional RF stability from DC to 20 GHz
- 50 Ω matched at input and output — no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Electronic Warfare
- Industrial and Scientific Systems
- Deep Space Applications
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