H4O1G1
3.0-5.5 GHz, 5 W, 37 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package
Engineered for demanding RF systems.
Built for integration.
Description
The H4O1G1 is a high-performance, multi-stage radio frequency power amplifier (PA) ideal for use as a driver or pre-driver stage in 5G base stations, S-Band or C-band radars and satcom systems, and as a final-stage PA in 5G Fixed Wireless Access (FWA) devices. It provides >5 Watts of RF power over a 2.5 GHz bandwidth (>50% relative bandwidth). The amplifier offers exceptional linearity and comes with 50 Ω input and output impedances without the need for external matching elements. This GaN MMIC is housed in a 4 mm x 5 mm QFN package and facilitates a compact, low-cost PCB design by requiring only four pins for all external connections, including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 37 dB small signal gain, ±3 dB gain flatness
- 37 dBm of output power
- PAE > 40% across the 3.0-4.0 GHz band
- Excellent EVM performance
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output RF terminals
- Single VGG and VDD supply pins for all stages
- Robustness to ESD
Applications
- 5G Macro and Micro Base Stations
- 5G FWA
- Defence Applications (Radar, UAV)
- Satellite Communications
System detail.
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