H4O1G1
3.0-5.5 GHz, 5 W, 37 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package
Engineered for demanding RF systems.
Built for integration.
Description
The H4O1G1 is a high-performance, multi-stage radio frequency power amplifier (PA) ideal for use as a driver or pre-driver stage in 5G base stations, S-Band or C-band radars and satcom systems, and as a final-stage PA in 5G Fixed Wireless Access (FWA) devices. It provides >5 Watts of RF power over a 2.5 GHz bandwidth (>50% relative bandwidth). The amplifier offers exceptional linearity and comes with 50 Ω input and output impedances without the need for external matching elements. This GaN MMIC is housed in a 4 mm x 5 mm QFN package and facilitates a compact, low-cost PCB design by requiring only four pins for all external connections, including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 37 dB small signal gain, ±3 dB gain flatness
- 37 dBm of output power
- PAE > 40% across the 3.0-4.0 GHz band
- Excellent EVM performance
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output RF terminals
- Single VGG and VDD supply pins for all stages
- Robustness to ESD
Applications
- 5G Macro and Micro Base Stations
- 5G FWA
- Defence Applications (Radar, UAV)
- Satellite Communications
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
