TRANSCEIVERS

One chipset.
FR1 and FR2.

SILICON TRANSCEIVER AND GaN FRONT-END, DESIGNED TO PAIR

A silicon MIMO transceiver and a GaN front-end designed to work together, covering sub-6 GHz and mmWave from one architecture.

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MILLIBEAM RF components

The chipset

Two parts. Designed to pair.

Silicon MIMO and a GaN front-end, connected by a shared local oscillator.

Silicon · FR1

P1D1A1

MIMO transceiver with integrated synthesiser and beam steering.

Operating frequency: 3.3–4.2 GHz
Channels: 2 Tx + 2 Rx
Programmable BW: 10–800 MHz
Rx gain: −10 to +50 dB
Noise figure: 5 dB
Beam steering: 360° in 5.6° steps
Supply: 1.2 V
Package: QFN 7 × 7 mm, 60-lead

Integrated PLL · LO output7.2–8.8 GHz

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LO handoff 7.3–8.6 GHz shared range

GaN · FR1 + FR2

F1M1G1

Front-end RFIC with power amplifier on-chip.

Operating frequency: 3.3–4.2 GHz
26.5–29.5 GHz
Channels: 2 Tx + 2 Rx
Tx power · FR1: 36 dBm Psat30 dBm P1dB
Tx power · FR2: 27 dBm Psat20 dBm P1dB
Tx gain: 23–27 dB
PAE: 43–53%
Supply: 25 V
Package: QFN 7 × 7 mm, 46-lead

External LO input · ×3 on-chip7.3–8.6 GHz

Request datasheet ↗

One synthesiser.
Shared across both chips.

The P1D1A1’s integrated PLL provides a 7.2–8.8 GHz LO output. The F1M1G1 accepts an external LO at 7.3–8.6 GHz and includes an on-chip ×3 multiplier. Their shared 7.3–8.6 GHz tuning range allows one synthesiser to serve both parts.

Designed to work together, each part can also be used independently within a suitable radio architecture.

Transmit power is quoted at saturation (Psat), with the 1 dB compression point (P1dB) shown beneath it. Psat is the same measure used across the amplifier range, so the two can be compared directly.

All Power Amplifiers General-Purpose Amplifiers Multi-element Transceivers Transceiver Beamformers RF Switches Antenna-in Package Mixer

42 PARTS

H4C1Q7

H4C1Q7

Power Amplifiers

3.3–3.8 GHz, 60 W Psat, 20 dB Gain, GaN Doherty Power Amplifier for 5G NR n78

H4E1M1

H4E1M1

Power Amplifiers

4.5–5.0 GHz, 20 W Psat, 30 dB Gain, GaN Integrated Doherty Power Amplifier for 5G NR n79

H4C1M1

H4C1M1

Power Amplifiers

3.3–3.8 GHz, 20 W Psat, 31 dB Gain, GaN Integrated Doherty Power Amplifier for 5G NR n78

H8G2Z1SLBE2

H8G2Z1SLBE2

Antenna-in Package

24.25–27.5 GHz, ±45° Slant Polarisation, Planar Phased Array Cell AiP

H8S1G9fVB

H8S1G9fVB

Antenna-in Package

18–20 GHz, 5.8–6.8 dBi Gain, Surface Mounted, Phased Array AiP Unit Cell

H8Q2G9fVB

H8Q2G9fVB

Antenna-in Package

7.5–9.6 GHz, X-Band, 4.2–6.3 dBi Gain, Surface Mounted, Phased Array AiP Cell

H8Q1G9fVB

H8Q1G9fVB

Antenna-in Package

9.6–12 GHz, X-Band, 4.3–6.3 dBi Gain, Surface Mounted, Phased Array AiP Cell

H8X2G9fVO

H8X2G9fVO

Antenna-in Package

6.5–8.0 GHz, Omnidirectional, 3.2 dBi Gain, Discrete AiP Unit

H8X1G9fVO

H8X1G9fVO

Antenna-in Package

5.925–7.125 GHz, Omnidirectional, 3.2 dBi Gain, Discrete AiP Unit

H8X1G9fVB

H8X1G9fVB

Antenna-in Package

5.9–7.1 GHz, Vertical Polarisation, 5.8 dBi Gain, Discrete AiP Unit

H8P1G9fVB

H8P1G9fVB

Antenna-in Package

5.1–5.9 GHz, Vertical Polarisation, 5.8 dBi Gain, Discrete AiP Unit

H8P1G9fVO

H8P1G9fVO

Antenna-in Package

5.15–5.825 GHz, Omnidirectional, 2.5 dBi Average Gain, Discrete AiP Unit

H8D1G9fVB

H8D1G9fVB

Antenna-in Package

3.5–4.4 GHz, Vertical Polarisation, 5.5 dBi Gain, Discrete AiP Unit

H8QR1G9fVB

H8QR1G9fVB

Antenna-in Package

10.7–12.7 GHz DL, 14.0–14.5 GHz UL, dual-band Ku surface-mount Antenna-in-Package unit cell for SATCOM phased arrays

H4W1G1

H4W1G1

Power Amplifiers

2–6 GHz, 5 W, 26 dB Gain, GaN MMIC PA in QFN Package

H4O1Q7

H4O1Q7

Power Amplifiers

2.5–2.7 GHz, 60 W Psat, 20 dB Gain, GaN Doherty Power Amplifier for 5G NR n41

H4V1I1

H4V1I1

Power Amplifiers

0.4–2 GHz, 7 W, 39 dB Gain, GaN MMIC PA in QFN Package

H4V1C1

H4V1C1

Power Amplifiers

0.4–2 GHz, 0.5 W, 32 dB Gain, GaN MMIC PA in QFN Package

H4W1A1

H4W1A1

Power Amplifiers

2.3–7 GHz, 0.25 W, 25 dB Gain, GaN MMIC Power Amplifier for Wi-Fi Infrastructure, UAS, and S-Band Radar

H4E1N1

H4E1N1

Power Amplifiers

4.4–5.5 GHz, 20 W Psat, 3 W Pavg, 32 dB Gain, GaN MMIC Power Amplifier for 5G NR

H5D1E1

H5D1E1

General-Purpose Amplifiers

3.1-4.2 GHz, GaN MMIC General-purpose Amplifier in a Low-cost Package

H4Q1H1

H4Q1H1

Power Amplifiers

8-12 GHz, 5 W, 37 dB Gain, GaN MMIC Power Amplifier In A Low-cost Package

H4P1G1

H4P1G1

Power Amplifiers

4.5-6.0 GHz, 5 W, 33 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package

H4O1G1

H4O1G1

Power Amplifiers

3.0-5.5 GHz, 5 W, 37 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package

H8G1Z1VEE1

H8G1Z1VEE1

Antenna-in Package

26.5-29.5 GHz, End-fire Radiation, 5.0 dBi Gain, Linear Phased Array Cell AiP

H8G1Z1SLBE2

H8G1Z1SLBE2

Antenna-in Package

26.5-29.5 GHz, +/-45 deg Slant Polarization, Planar Phased Array Cell AiP

H8G1Z1LRBN

H8G1Z1LRBN

Antenna-in Package

26.5-29.5 GHz, Left/Right Hand Circular Polarization, 5.3 dBi Gain, Discrete AiP Unit

H8G1Z1HVBN

H8G1Z1HVBN

Antenna-in Package

26.5-29.5 GHz, H/V-polarization, 5.5 dBi Gain, Discrete AiP Unit

P1D1A1

P1D1A1

Multi-element Transceivers

5G NR 3.3 - 4.1 GHz 2Tx + 2Rx MIMO Transceiver

F1M1G1

F1M1G1

Multi-element Transceivers

5G NR Dual-Connectivity Multi-band FR1+FR2 Transceiver (2Tx+2Rx)

Designing an FR1 or FR2 radio?

Tell us your bands, channel requirements and target architecture. Talk to an engineer about using the chipset or either part independently.

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Technology portfolio 2026

The full portfolio.From chip to system.

Explore our components, RF platforms and deployable systems in one document.

MILLIBEAM Technology Portfolio 2026 catalogue.

48 pages / A4 PDF / 2026 edition

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Acknowledgement of Country

MILLIBEAM acknowledges the Traditional Custodians of the lands throughout Australia where we live and work today. We celebrate the diversity of Aboriginal peoples and their ongoing cultures and connections to land, sea and community. We pay our respects to the Elders both past and present and extend that respect to all Aboriginal and Torres Strait Islander peoples today.