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Multi-element Transceivers
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H4E1M1
Industries
5G NR Macro Base Stations
5G Small Cells
Fixed Wireless Access
The H4E1M1 is a multi-stage GaN integrated Doherty power amplifier for 5G NR n79 macro base stations, delivering 43 dBm (20 W) saturated output power across 4.5–5.0 GHz with over 30 dB gain.
With the Doherty network integrated on-chip, it achieves approximately 32% average power-added efficiency at 8 dB output back-off with ACPR of −32 dBc, supporting 100 MHz signal bandwidth. Housed in a 4×5 mm QFN with 50 Ω matched I/O and no external matching required.
Features
- 4.5 – 5.0 GHz (5G NR n79)
- Over 30 dB gain with ±1 dB flatness
- 43 dBm saturated output power (20 W)
- ~32% average PAE at 8 dB output back-off
- ACPR −32 dBc, EVM 5–6% at 8 dB back-off
- Supports 100 MHz signal bandwidth and carrier aggregation
- Doherty splitter and combiner integrated on-chip
- 50 Ω matched at input and output
- QFN 4×5 mm package
Industries
5G NR Macro Base Stations
5G Small Cells
Fixed Wireless Access
Power Amplifiers
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Antenna-in-Package
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General-Purpose Amplifiers
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Beamformers
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Explore our other feature products
Industries
5G NR Macro Base Stations
5G Small Cells
Fixed Wireless Access
H4E1M1
Features
20 W Psat, 30 dB Gain
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~32% Avg PAE @ 8 dB OBO
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