H4P1G1
4.5-6.0 GHz, 5 W, 33 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package
Engineered for demanding RF systems.
Built for integration.
Description
The H4P1G1 is a high-performance, multi-stage power amplifier (PA) for use as a pre-driver in C-band radars and satcom systems. The amplifier provides >5 Watts of RF power over a 1.5 GHz bandwidth (>50% relative bandwidth). It offers superior efficiency, high gain, and comes with 50 Ω input and output impedances without the need for external matching elements. This GaN MMIC is housed in a 4 mm x 5 mm QFN package and facilitates a compact, low-cost PCB design by requiring only four pins for all external connections, including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 33 dB small signal gain with ±1.5 dB gain flatness
- 37 dBm of output power
- PAE > 40% across the 4.5-5.2 GHz band
- Excellent EVM performance
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output RF terminals
- Single VGG and VDD supply pins for all transistor stages
- Robustness to ESD
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Radio System Integration
System detail.
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