H4P1G1
4.5-6.0 GHz, 5 W, 33 dB Gain, GaN MMIC Power Amplifier in a Low-cost Package
Engineered for demanding RF systems.
Built for integration.
Description
The H4P1G1 is a high-performance, multi-stage power amplifier (PA) for use as a pre-driver in C-band radars and satcom systems. The amplifier provides >5 Watts of RF power over a 1.5 GHz bandwidth (>50% relative bandwidth). It offers superior efficiency, high gain, and comes with 50 Ω input and output impedances without the need for external matching elements. This GaN MMIC is housed in a 4 mm x 5 mm QFN package and facilitates a compact, low-cost PCB design by requiring only four pins for all external connections, including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 33 dB small signal gain with ±1.5 dB gain flatness
- 37 dBm of output power
- PAE > 40% across the 4.5-5.2 GHz band
- Excellent EVM performance
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output RF terminals
- Single VGG and VDD supply pins for all transistor stages
- Robustness to ESD
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Radio System Integration
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
