Power Amplifiers
H4Q1H1
8-12 GHz, 5 W, 37 dB Gain, GaN MMIC Power Amplifier In A Low-cost Package
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
8 - 12
SPEC 02
5
SPEC 03
37 (±1.0 dB)
PRODUCT OVERVIEW
Built for integration.
Description
The H4Q1H1 is a high-performance, multi-stage power amplifier for use in radar, satcom systems and point-to-point radio implementations. The amplifier provides 5 Watts of RF power over a bandwidth of 8-12 GHz. It offers exceptional linearity and comes with 50 Ω input and output impedances without the need for external matching elements. The GaN MMIC is housed in a 4 mm x 5 mm QFN package. It facilitates a compact, low-cost PCB design by requiring only four pins for all external connections, including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 37 dB Small Signal Gain with ±1.0 dB flatness
- 37 dBm of output power
- 41% peak PAE
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output pins
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Electronic Warfare
- Industrial and Scientific Systems
- Deep Space Application
TECHNICAL VIEW
System detail.
START A CONVERSATION
Need the full technical brief?
Tell us about your requirements and our engineering team will follow up.
