H4Q1H1
8-12 GHz, 5 W, 37 dB Gain, GaN MMIC Power Amplifier In A Low-cost Package
Engineered for demanding RF systems.
Built for integration.
Description
The H4Q1H1 is a high-performance, multi-stage power amplifier for use in radar, satcom systems and point-to-point radio implementations. The amplifier provides 5 Watts of RF power over a bandwidth of 8-12 GHz. It offers exceptional linearity and comes with 50 Ω input and output impedances without the need for external matching elements. The GaN MMIC is housed in a 4 mm x 5 mm QFN package. It facilitates a compact, low-cost PCB design by requiring only four pins for all external connections, including RF input and output signals, and multi-stage gate and drain supply voltages.
Features
- 37 dB Small Signal Gain with ±1.0 dB flatness
- 37 dBm of output power
- 41% peak PAE
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output pins
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
Applications
- Defence Applications (Radar, UAV)
- Satellite Communications
- Electronic Warfare
- Industrial and Scientific Systems
- Deep Space Application
System detail.
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
