H8G1Z1VEE1
26.5-29.5 GHz, End-fire Radiation, 5.0 dBi Gain, Linear Phased Array Cell AiP
Engineered for demanding RF systems.
Built for integration.
Description
The H8G1Z1VEE1 is a PCB-edge-mounting AiP designed for operation in the mmWave frequency band, featuring end-fire radiation with vertical-polarization profile. It delivers high-performance radiation across the n257 band (26.5 GHz to 29.5 GHz), offering a realized gain of 5.0 dBi, a VSWR < 2, and a 60-deg half-power beamwidth. This AiP could also works with multiple unit in the linear phased array, supporting +/-45 deg of beamforming range. Each AiP structure is housed in a compact 5.8 mm x 19 mm footprint with a quad-flat feeding pad, enabling direct connection to a 50-ohm microstrip line on edge of motherboard PCB without need for external matching elements. The package has a height of 0.7 mm.
Features
- 5.0 dBi realized gain
- 85% radiation efficiency
- 50-ohm matched Impedance bandwidth 26~30 GHz (VSWR<2)
- Half Power Beam Width: 60 deg
- 5.8 mm x 19 mm footprint, 0.7 mm height
- Tool-free integration onto the PCB as a surface-mount device (SMD)
- Designed for robustness, ensuring compatibility with PCBs across a variety of substrate thicknesses and dielectric constants (Dk)
- High tolerance on mounting misalignment
- Vertical polarizations orthogonal to the motherboard PCB plane
Applications
- 5G micro base-stations
- End-user compact devices
- AR/VR devices
- Internet of Things (high speed)
- Mobile devices
System detail.
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