Power Amplifiers
H4O1Q7
2.5–2.7 GHz, 60 W Psat, 20 dB Gain, GaN Doherty Power Amplifier for 5G NR n41
KEY SPECIFICATIONS
Engineered for demanding RF systems.
SPEC 01
2.5 – 2.7 GHz
SPEC 02
60 W (48 dBm)
SPEC 03
20 dB (typ.)
PRODUCT OVERVIEW
Built for integration.
Description
The H4O1Q7 is a high-power, high-efficiency multi-stage GaN Doherty power amplifier module for macro 5G NR base stations, delivering 60 W (48 dBm) saturated output power across the 2.5–2.7 GHz n41 band with 20 dB gain and ±1 dB flatness. Approximately 40% average PAE at 8 dB output back-off, supporting 100 MHz signal bandwidth and 2× 100 MHz carrier aggregation. 50 Ω matched I/O in a 13.5 × 10.4 mm QFN.
Features
- 20 dB gain with ±1 dB flatness
- 60 W saturated output power (48 dBm)
- ~40% average PAE at 8 dB output back-off
- Supports signal bandwidth up to 100 MHz
- Supports carrier aggregation — 2× 100 MHz
- 50 Ω matched at input and output — no external matching required
- QFN 13.5 × 10.4 mm package
Applications
- 5G NR Macro Base Stations
TECHNICAL VIEW
System detail.
START A CONVERSATION
Need the full technical brief?
Request the datasheet or technical brief and our engineering team will follow up, usually within one business day. Prefer email? Write to marketing@millibeam.com and quote the part number.
