H4C1M1

H4C1M1
H4C1M1
Industries
5G NR Macro Base Stations
5G Small Cells
Fixed Wireless Access

The H4C1M1 is a multi-stage GaN integrated Doherty power amplifier for 5G NR n78 macro base stations, delivering 42.5 dBm (20 W) saturated output power across 3.3–3.8 GHz with 31 dB gain and ±1 dB flatness.

The Doherty splitter and combiner are integrated on-chip, so no external network is required. It achieves approximately 34% average power-added efficiency at 8 dB output back-off with ACPR of −33 dBc, and supports 100 MHz signal bandwidth with 2× carrier aggregation. Housed in a 4×5 mm QFN with 50 Ω matched I/O.

H4C1M1
Industries
5G NR Macro Base Stations
5G Small Cells
Fixed Wireless Access
Features
  • 3.3 – 3.8 GHz (5G NR n78)
  • 31 dB gain with ±1 dB flatness
  • 42.5 dBm saturated output power (20 W)
  • ~34% average PAE at 8 dB output back-off
  • ACPR −33 dBc, EVM ~5% at 8 dB back-off
  • Supports 100 MHz signal bandwidth and 2× carrier aggregation
  • Doherty splitter and combiner integrated on-chip
  • 50 Ω matched at input and output
  • QFN 4×5 mm package
Industries
5G NR Macro Base Stations
5G Small Cells
Fixed Wireless Access
Beamformers
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