H4V1C1
The H4V1C1 is a high-performance, linear GaN MMIC power amplifier designed for ISM band applications, L-band satellite uplinks, and public safety radio systems. It delivers 0.5 W of RF output power across a wideband 0.4–2 GHz frequency range with 32 dB of small signal gain and ±2 dB flatness.
The device features 50 Ω matched input and output impedances with no external matching components required, and single VGG and VDD supply pins for all transistor stages — enabling a compact, low-cost PCB footprint. The GaN MMIC is housed in a 4 mm × 5 mm QFN package with just four external pins. Unconditional RF stability is guaranteed from DC to 40 GHz, with on-chip ESD protection.
- 32 dB Small Signal Gain with ±2 dB flatness
- 29 dBm output power
- Unconditional RF stability from DC to 40 GHz
- 50 Ω matched at input and output — no external matching required
- Single VGG and VDD supply pins for all transistor stages
- ESD protection
- 4 mm × 5 mm QFN package
Acknowledgment of Country - MILLIBEAM acknowledges the Traditional Custodians of the lands throughout Australia where we live and work today. We celebrate the diversity of Aboriginal peoples and their ongoing cultures and connections to land, sea and community. We pay our respects to the Elders both past and present and extend that respect to all Aboriginal and Torres Strait Islander peoples today.








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